smd type so t -363 unit: mm 1.3 +0.1 -0.1 0.65 0.525 1.25 +0.1 -0.1 0.36 0.1 +0.05 -0.02 0.1max 0.95 +0.05 -0.05 2.3 +0.15 -0.15 0.3 +0.1 -0.1 2.1 +0.1 -0.1 1e1 2b1 3c2 4e2 5b2 6c1 kc856s (BC856S) features two transistors in one package reduces number of components and board space no mutual interference between the transistors. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -80 v collector-emitter voltage v ceo -65 v emitter-base voltage v ebo -5 v collector current - continuous i c -100 ma power dissipation p d 200 mw thermal resistance, junction to ambient r ja 416 /w operating and storage junction temperature range t j ,t stg -65 to +150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit v cb =- 30 v, i e =0 -15 na v cb =- 30 v, i e =0,t a =150 -5.0 a emitter- cutoff current i ebo i c =0,v eb =-5v -100 na dc current gain h fe i c =-2.0ma,v ce =-5.0v 110 i c =-10ma,i b =- 0.5 ma -100 mv i c =-100ma,i b =- 5.0 ma -300 mv base-emitter saturation voltage v be(sat) i c =-10ma,i b =-0.5ma 700 m v output capacitance c ob v cb = -10 v, f = 1.0 mhz 2.5 pf transistion frequency f t i c =-10ma,v ce = -5.0v,f = 100 mhz 100 mhz i cbo collector-cutoff current v ce(sat) collector-emitter saturation voltage marking marking 5f sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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